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| TetraFET D1204UK METAL GATE RF SILICON FET MECHANICAL DATA C D (2 pls) E B 1 2 3 A G GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 30W - 12.5V - 500MHz SINGLE ENDED FEATURES * SIMPLIFIED AMPLIFIER DESIGN * SUITABLE FOR BROAD BAND APPLICATIONS * LOW Crss 5 4 H I F M K J N DT PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 SOURCE (COMMON) PIN 4 DRAIN DIM A B C D E F G H I J K M N mm 6.35 DIA 3.17 DIA 18.41 5.46 5.21 7.62 21.59 3.94 12.70 0.13 24.76 2.59 4.06 Tol. 0.13 0.13 0.25 0.13 0.13 MAX 0.38 0.13 0.13 0.03 0.13 0.13 0.25 Inches 0.250 DIA 0.125 DIA 0.725 0.215 0.205 0.300 0.850 0.155 0.500 0.005 0.975 0.102 0.160 Tol. 0.005 0.005 0.010 0.005 0.005 MAX 0.015 0.005 0.005 0.001 0.005 0.005 0.010 GATE SOURCE (COMMON) * USEFUL PO AT 1GHz * LOW NOISE * HIGH GAIN - 10 dB MINIMUM APPLICATIONS * HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 117W 40V 20V 15A -65 to 150C 200C Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 1/99 D1204UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS Ciss Coss Crss Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 12.5V VGS = 20V ID = 10mA VDS = 10V PO = 30W VDS = 12.5V f = 500MHz VDS = 0 VGS = -5V f = 1MHz f = 1MHz f = 1MHz VDS = 12.5V VGS = 0 VDS = 12.5V VGS = 0 IDQ = 0.6A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 1A 0.5 1.2 10 50 20:1 40 Typ. Max. Unit V 1 3 7 mA A V S dB % -- 180 120 12 pF pF pF VGS(th) Gate Threshold Voltage* VSWR Load Mismatch Tolerance * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 1.5C / W Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 1/99 |
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